网关到芯片:高速I/O信号和接口

N. Kumar, S. Velu, Rajan Verma
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引用次数: 0

摘要

集成电路输入和输出的设计传统上是一项直接的任务,涉及采购规格及其实施。在过去的几代技术中,集成电路I/O的设计和实现变得更加复杂。正如摩尔定律所预测的那样,为了满足消费者的需求,每个芯片的功能将每1.5-2年翻一番,相应地,对以越来越高的速度处理电信号的需求也随之增加。国际半导体技术路线图(ITRS)预测,到2015年高性能asic的I/O带宽(Gb/s)将达到30 Gb/s。增加复杂性的是需要符合大量新兴的I/O规范,并持续关注有关静电放电(ESD)和同步开关噪声(SSN)的可靠性,电路设计人员面临着尽可能多的挑战。本教程介绍了用于构建低功耗、高带宽、高可靠I/O的技术和方法。它涵盖了LVDS、DDR、XAUI和PCI-Express等流行的信令标准。还将涵盖ESD和信号完整性的概念。本节教程将涵盖芯片、电路和布局指南中ESD故障的起源,以避免ESD故障和ESD测试程序。最后,本教程将给出各种新兴I/O(如DDR、LVDS和USB-PHY)的详细体系结构概述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gateway to Chips: High Speed I/O Signalling and Interface
The design of inputs and outputs to integrated circuits has traditionally been a straightforward task involving procurement of a specification and its implementation. In the past few technology generations design and implementation of integrated circuit I/O's have become much more complex. Just as Moore's Law predicts that functions per chip will double every 1.5-2 years to keep up with consumer demand, there is a corresponding demand for processing electrical signals at progressively higher rates. The international technology roadmap for semiconductors (ITRS) predicts the I/O bandwidth (Gb/s) for high performance ASICs to be 30 Gb/s by the year 2015. Adding to the complexity is the need to conform to a plethora of emerging I/O specifications and continued focus on reliability regarding electro static discharge (ESD) and simultaneous switching noise (SSN), and the circuit designer has about as much challenges as one can stand. This tutorial presents the techniques and methods employed to build a low power, high bandwidth, highly reliable I/O. It covers the popular signaling standards like LVDS, DDR, XAUI and PCI-Express. Also to be covered are concepts of ESD and Signal Integrity. This section of the tutorial will cover the origins of ESD failures in chips, circuit and layout guidelines to avoid ESD failures and ESD testing procedures. Finally, the tutorial will give a detailed architectural overview of various emerging I/O's such as the DDR, LVDS, and the USB-PHY.
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