200千瓦6.5 kV igbt半桥和全桥DC/DC变换器的可行性研究

D. Vinnikov, M. Lehtla
{"title":"200千瓦6.5 kV igbt半桥和全桥DC/DC变换器的可行性研究","authors":"D. Vinnikov, M. Lehtla","doi":"10.1109/SPEEDHAM.2008.4581238","DOIUrl":null,"url":null,"abstract":"This paper discusses the half- and full-bridge DC/DC converter topologies for high-power (200 kW) high-voltage (3.6 kV) applications. Focus is on the primary part of these topologies, i.e. the feasibility of two high-voltage IGBTs replacement in the full-bridge by two high-voltage film capacitors in the half-bridge.","PeriodicalId":345557,"journal":{"name":"2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Feasibility study of 200 kW half-bridge and full-bridge DC/DC converters with 6.5 kV IGBTs\",\"authors\":\"D. Vinnikov, M. Lehtla\",\"doi\":\"10.1109/SPEEDHAM.2008.4581238\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the half- and full-bridge DC/DC converter topologies for high-power (200 kW) high-voltage (3.6 kV) applications. Focus is on the primary part of these topologies, i.e. the feasibility of two high-voltage IGBTs replacement in the full-bridge by two high-voltage film capacitors in the half-bridge.\",\"PeriodicalId\":345557,\"journal\":{\"name\":\"2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPEEDHAM.2008.4581238\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPEEDHAM.2008.4581238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文讨论了用于大功率(200kw)高压(3.6 kV)应用的半桥和全桥DC/DC转换器拓扑结构。重点是这些拓扑结构的主要部分,即用半桥中的两个高压薄膜电容器替换全桥中的两个高压igbt的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Feasibility study of 200 kW half-bridge and full-bridge DC/DC converters with 6.5 kV IGBTs
This paper discusses the half- and full-bridge DC/DC converter topologies for high-power (200 kW) high-voltage (3.6 kV) applications. Focus is on the primary part of these topologies, i.e. the feasibility of two high-voltage IGBTs replacement in the full-bridge by two high-voltage film capacitors in the half-bridge.
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