Jr R. Green, A. Lelis, D. Urciuoli, E. Schroen, D. Habersat
{"title":"SiC mosfet的动态导通电阻","authors":"Jr R. Green, A. Lelis, D. Urciuoli, E. Schroen, D. Habersat","doi":"10.1109/IRPS48203.2023.10224769","DOIUrl":null,"url":null,"abstract":"This work describes the dynamic nature of on-resistance in SiC MOSFETs, and explains how this happens whenever large threshold-voltage instabilities occur on the time scale of standard device operation, due to the presence of large numbers of active near-interfacial oxide traps—even in previously-unstressed, as-processed devices.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dynamic On-State Resistance in SiC MOSFETs\",\"authors\":\"Jr R. Green, A. Lelis, D. Urciuoli, E. Schroen, D. Habersat\",\"doi\":\"10.1109/IRPS48203.2023.10224769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work describes the dynamic nature of on-resistance in SiC MOSFETs, and explains how this happens whenever large threshold-voltage instabilities occur on the time scale of standard device operation, due to the presence of large numbers of active near-interfacial oxide traps—even in previously-unstressed, as-processed devices.\",\"PeriodicalId\":159030,\"journal\":{\"name\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS48203.2023.10224769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10224769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This work describes the dynamic nature of on-resistance in SiC MOSFETs, and explains how this happens whenever large threshold-voltage instabilities occur on the time scale of standard device operation, due to the presence of large numbers of active near-interfacial oxide traps—even in previously-unstressed, as-processed devices.
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