Keita Takatsu, K. Niitsu, T. Shidei, N. Miura, T. Kuroda
{"title":"一个0.45 v -2.7 v电感耦合电平移位器","authors":"Keita Takatsu, K. Niitsu, T. Shidei, N. Miura, T. Kuroda","doi":"10.1109/ASSCC.2010.5716591","DOIUrl":null,"url":null,"abstract":"This paper presents a 0.45V-to-2.7V level shifter utilizing inductive coupling. Since primary and secondary coils are AC-coupled, each coil can be biased at arbitrary voltage independent from the conversion level difference. This enables both the primary and the secondary circuits to operate at the optimal operating region. In addition, the inductive coupling itself can provide an additional intermediate level-shifting by exploiting a coil-turn ratio between the primary and the secondary coils. As a result, wide-range voltage level conversion can be achieved. Test chip measurement in 65nm CMOS demonstrates voltage level conversion from 0.45V to 2.7V. Compared to a conventional level shifter, the primary voltage is reduced by 0.24V. In addition, the energy-delay product is reduced to 1/8.","PeriodicalId":437088,"journal":{"name":"2010 IEEE Asian Solid-State Circuits Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 0.45V-to-2.7V inductive-coupling level shifter\",\"authors\":\"Keita Takatsu, K. Niitsu, T. Shidei, N. Miura, T. Kuroda\",\"doi\":\"10.1109/ASSCC.2010.5716591\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 0.45V-to-2.7V level shifter utilizing inductive coupling. Since primary and secondary coils are AC-coupled, each coil can be biased at arbitrary voltage independent from the conversion level difference. This enables both the primary and the secondary circuits to operate at the optimal operating region. In addition, the inductive coupling itself can provide an additional intermediate level-shifting by exploiting a coil-turn ratio between the primary and the secondary coils. As a result, wide-range voltage level conversion can be achieved. Test chip measurement in 65nm CMOS demonstrates voltage level conversion from 0.45V to 2.7V. Compared to a conventional level shifter, the primary voltage is reduced by 0.24V. In addition, the energy-delay product is reduced to 1/8.\",\"PeriodicalId\":437088,\"journal\":{\"name\":\"2010 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2010.5716591\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2010.5716591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文提出了一种利用电感耦合的0.45 v -2.7 v电平移位器。由于初级线圈和次级线圈是交流耦合的，每个线圈可以在任意电压下偏置，而不受转换电平差的影响。这使得初级回路和次级回路都能在最佳工作区域工作。此外，电感耦合本身可以通过利用初级线圈和次级线圈之间的线圈匝数比提供额外的中间电平转移。因此，可以实现大范围的电压电平转换。在65nm CMOS测试芯片测量显示从0.45V到2.7V的电压电平转换。与传统的电平移位器相比，初级电压降低了0.24V。此外，能量延迟积减小到1/8。
This paper presents a 0.45V-to-2.7V level shifter utilizing inductive coupling. Since primary and secondary coils are AC-coupled, each coil can be biased at arbitrary voltage independent from the conversion level difference. This enables both the primary and the secondary circuits to operate at the optimal operating region. In addition, the inductive coupling itself can provide an additional intermediate level-shifting by exploiting a coil-turn ratio between the primary and the secondary coils. As a result, wide-range voltage level conversion can be achieved. Test chip measurement in 65nm CMOS demonstrates voltage level conversion from 0.45V to 2.7V. Compared to a conventional level shifter, the primary voltage is reduced by 0.24V. In addition, the energy-delay product is reduced to 1/8.
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