{"title":"功率GaAs场效应管微带夹具设计","authors":"R. Lane","doi":"10.1109/ARFTG.1989.323933","DOIUrl":null,"url":null,"abstract":"Small signal,(low power) devices can very adequately be In the new microstrip design the chip is die attached directly to a gold plated copper or brass carrier which is in intimate thermal contact with a finned aluminum heat sink. This results in an \"unblown\" thermal resistance of 3.S°C/Watt and a \"blown\" Rth of 1,6OC/Watt.","PeriodicalId":358927,"journal":{"name":"33rd ARFTG Conference Digest","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Microstrip Fixture Design for Power GaAs Fets\",\"authors\":\"R. Lane\",\"doi\":\"10.1109/ARFTG.1989.323933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Small signal,(low power) devices can very adequately be In the new microstrip design the chip is die attached directly to a gold plated copper or brass carrier which is in intimate thermal contact with a finned aluminum heat sink. This results in an \\\"unblown\\\" thermal resistance of 3.S°C/Watt and a \\\"blown\\\" Rth of 1,6OC/Watt.\",\"PeriodicalId\":358927,\"journal\":{\"name\":\"33rd ARFTG Conference Digest\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"33rd ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1989.323933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"33rd ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1989.323933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Small signal,(low power) devices can very adequately be In the new microstrip design the chip is die attached directly to a gold plated copper or brass carrier which is in intimate thermal contact with a finned aluminum heat sink. This results in an "unblown" thermal resistance of 3.S°C/Watt and a "blown" Rth of 1,6OC/Watt.
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