V. Raghunathan, R. Claps, O. Boyraz, P. Koonath, D. Dimitropoulos, B. Jalali
{"title":"绝缘体上sige波导中的拉曼放大和激光","authors":"V. Raghunathan, R. Claps, O. Boyraz, P. Koonath, D. Dimitropoulos, B. Jalali","doi":"10.1109/SOI.2005.1563586","DOIUrl":null,"url":null,"abstract":"Stimulated Raman scattering in SOI waveguides has received significant attention recently with the demonstration of pulsed, continuous wave Raman lasers and high gain Raman amplification. However, the limited bandwidth of the Raman signal in silicon (/spl sim/105GHz) renders this scheme unsuitable for broadband WDM amplification unless multi-pumping scheme is employed. Large pulsed gain and lasing have been reported in GeSi waveguides. The SiGe on SOI platform represents a Raman medium with a flexible gain spectrum.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Raman amplification and lasing in SiGe-on-insulator waveguides\",\"authors\":\"V. Raghunathan, R. Claps, O. Boyraz, P. Koonath, D. Dimitropoulos, B. Jalali\",\"doi\":\"10.1109/SOI.2005.1563586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stimulated Raman scattering in SOI waveguides has received significant attention recently with the demonstration of pulsed, continuous wave Raman lasers and high gain Raman amplification. However, the limited bandwidth of the Raman signal in silicon (/spl sim/105GHz) renders this scheme unsuitable for broadband WDM amplification unless multi-pumping scheme is employed. Large pulsed gain and lasing have been reported in GeSi waveguides. The SiGe on SOI platform represents a Raman medium with a flexible gain spectrum.\",\"PeriodicalId\":116606,\"journal\":{\"name\":\"2005 IEEE International SOI Conference Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2005.1563586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Raman amplification and lasing in SiGe-on-insulator waveguides
Stimulated Raman scattering in SOI waveguides has received significant attention recently with the demonstration of pulsed, continuous wave Raman lasers and high gain Raman amplification. However, the limited bandwidth of the Raman signal in silicon (/spl sim/105GHz) renders this scheme unsuitable for broadband WDM amplification unless multi-pumping scheme is employed. Large pulsed gain and lasing have been reported in GeSi waveguides. The SiGe on SOI platform represents a Raman medium with a flexible gain spectrum.
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