SHF集成电路用掺锗外延硅层

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003. Pub Date : 1900-01-01 DOI:10.1109/CRMICO.2003.158939

D. Brinkevich, V. Prosolovich, O.N. Yankovski, Yu.N. Yankovski

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引用次数: 0

摘要

结果表明，硅的锗掺杂在超高频集成电路制造技术中是可行的。掺杂锗的外延层可以降低泄漏电流，并增加由MOSFET工艺产生的p-n结和MOS结构的击穿电压。

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Germanium-doped epitaxial silicon layers for SHF ICs

It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structures produced by the MOSFET process to be increased.

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13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003.

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