薄膜中太赫兹吸收的优化

D. Grbovic, F. Alves, B. Kearney, Karamitros Apostolos, G. Karunasiri
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引用次数: 4

摘要

在本文中,我们报告了实验验证的模型,这些模型有助于设计和制造在3-5太赫兹光谱区域具有高宽带吸收的金属薄膜,或在特定谐振太赫兹频率下几乎100%吸收的薄超材料结构。采用COMSOL有限元建模软件对结构的太赫兹吸收特性进行建模。采用标准的微加工工艺在Si衬底上制备了优化的金属薄膜和超薄材料结构。利用FTIR光谱仪在反射模式下探测了结构的太赫兹光谱特性。在宽频带和共振超材料结构的薄膜上测量的太赫兹反射与它们各自的模型表现出良好的一致性。这两种类型的吸收器都可以用于制造基于mems的太赫兹热传感器,该传感器使用量子级联激光器(QCL)源工作在主动模式下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of THz absorption in thin films
In this paper, we report on experimentally verified models, which assist in the design and fabrication of either thin metal films, with high broad-band absorption in the 3–5 THz spectral region, or thin metatamaterial structures of nearly 100% absorption at a specific, resonant, THz frequency. The THz absorption properties of the structures were modeled using COMSOL finite element modeling software. Optimized thin metal films and thin metamaterial structures were fabricated using standard microfabrication processes on Si substrates. The THz spectral characteristics of the structures were probed using FTIR spectrometer in the reflection mode. The measured THz reflection, from thin film of both broad-band and resonant metamaterial structures, exhibit excellent agreement with their respective models. Both types of absorbers can be incorporated in the fabrication of MEMS-based THz thermal sensors operating in active mode with quantum cascade laser (QCL) sources.
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