超低Von和高压4H-SiC异质结二极管

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488007

H. Tanaka, T. Hayashi, Y. Shimoida, S. Yamagami, S. Tanimoto, M. Hoshi

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引用次数: 22

摘要

我们展示了用p +型多晶硅在4H-SiC的n型外延层上制备的异质结二极管(HJD)。与SiC肖特基势垒二极管(SBD)相比，HJD实现了极低的Von和高的反向阻断电压。在高达200°C的温度范围内，HJD显示出良好的二极管特性。测量的HJD开关特性显示出几乎为零的反向恢复，类似于SBD。

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Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode

We demonstrate a heterojunction diode (HJD) fabricated with p + -type polycrystalline silicon on an n - -type epitaxial layer of 4H-SiC. The HJD achieved extremely low Von and high reverse blocking voltage compared with a SiC Schottky barrier diode (SBD). The HJD shows good diode characteristics for temperatures ranging up to 200°C. Measured switching characteristics of the HJD exhibit almost zero reverse recovery similar to that of the SBD.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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