在MBE再生发射极技术中，具有1.2 /spl mu/m/sup 2/基极-发射极结面积的280 GHz f/sub T/ InP DHBT

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367885

Yun Wei, D. Scott, Yingda Dong, A. Gossard, M. Rodwell

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引用次数: 1

摘要

我们报道了一种InP/InGaAs/InP双异质结双极晶体管(DHBT)，具有0.3 /spl mu/m/spl乘以/4 /spl mu/m的再生基极-发射极结。HBT具有280 GHz电流增益截止频率(f/sub /spl tau//)和148 GHz功率增益截止频率(f/sub max/)。该DHBT采用分子束外延(MBE)再生发射极技术制备，其f/sub /spl tau//是目前报道的III-V型再生发射极HBT中最高的。在J/sub E/=11 mA //spl mu/m/sup 2/，交流峰值电流增益h/sub 21/=30，集电极击穿电压V/sub CEO/=5 V时，器件的V/sub CE.sat/<0.9 V。在这项技术中，基极-发射极结的面积被缩小到1.2 /spl mu/m/sup /，而更大面积的外部发射极接触保持了较低的11 /spl ω /发射极接入电阻。

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280 GHz f/sub T/ InP DHBT with 1.2 /spl mu/m/sup 2/ base-emitter junction area in MBE regrown-emitter technology

We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) with a 0.3 /spl mu/m/spl times/4 /spl mu/m regrown base-emitter junction. The HBT exhibits a 280 GHz current gain cutoff frequency (f/sub /spl tau//) and 148 GHz power gain cutoff frequency (f/sub max/). This DHBT was fabricated in a molecular beam epitaxy (MBE) regrown-emitter technology and has the highest f/sub /spl tau// yet reported for a III-V regrown-emitter HBT. The device has V/sub CE.sat/<0.9 V even at J/sub E/=11 mA //spl mu/m/sup 2/, peak AC current gain h/sub 21/=30, and collector breakdown voltage V/sub CEO/=5 V. In this technology, the area of base-emitter junction has been scaled to as small as 1.2 /spl mu/m/sup 2/ while a larger-area extrinsic emitter contact maintains a low 11 /spl Omega/ emitter access resistance.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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