一种适用于脉冲神经网络的超阈值紧凑硅神经元电路

Sayantan Samanta, Koushik Naskar, Souvanik Pal, Suman Mallik, Sudipta Ghosh, Swarnil Roy
{"title":"一种适用于脉冲神经网络的超阈值紧凑硅神经元电路","authors":"Sayantan Samanta, Koushik Naskar, Souvanik Pal, Suman Mallik, Sudipta Ghosh, Swarnil Roy","doi":"10.1109/EDKCON56221.2022.10032919","DOIUrl":null,"url":null,"abstract":"In this work we have designed and simulated a compact accelerated time silicon neuron circuit in super threshold to achieve proper neural dynamics. With this circuit we have accurately modeled regular spiking (RS), fast spiking (FS), chattering (CH) and intrinsic bursting (IB). The functionality of this circuit is verified with extreme simulation in 32nm, 45nm and 22nm FinFET technology. For this circuits we have analyzed different comparator circuits to meet the required dynamics and concluded that threshold modified comparator serves our purpose best.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A super Threshold Compact Silicon Neuron Circuit for Different Neuron Dynamics Suitable for Spiking Neural Network\",\"authors\":\"Sayantan Samanta, Koushik Naskar, Souvanik Pal, Suman Mallik, Sudipta Ghosh, Swarnil Roy\",\"doi\":\"10.1109/EDKCON56221.2022.10032919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we have designed and simulated a compact accelerated time silicon neuron circuit in super threshold to achieve proper neural dynamics. With this circuit we have accurately modeled regular spiking (RS), fast spiking (FS), chattering (CH) and intrinsic bursting (IB). The functionality of this circuit is verified with extreme simulation in 32nm, 45nm and 22nm FinFET technology. For this circuits we have analyzed different comparator circuits to meet the required dynamics and concluded that threshold modified comparator serves our purpose best.\",\"PeriodicalId\":296883,\"journal\":{\"name\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON56221.2022.10032919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON56221.2022.10032919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在本工作中,我们设计并模拟了一个紧凑的加速时间硅神经元电路,在超阈值下实现适当的神经动力学。利用该电路,我们精确地模拟了规则尖峰(RS)、快速尖峰(FS)、抖振(CH)和固有爆裂(IB)。该电路的功能在32nm、45nm和22nm FinFET技术下进行了极限仿真验证。对于这种电路,我们分析了不同的比较器电路来满足所需的动态,并得出阈值修正比较器最适合我们的目的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A super Threshold Compact Silicon Neuron Circuit for Different Neuron Dynamics Suitable for Spiking Neural Network
In this work we have designed and simulated a compact accelerated time silicon neuron circuit in super threshold to achieve proper neural dynamics. With this circuit we have accurately modeled regular spiking (RS), fast spiking (FS), chattering (CH) and intrinsic bursting (IB). The functionality of this circuit is verified with extreme simulation in 32nm, 45nm and 22nm FinFET technology. For this circuits we have analyzed different comparator circuits to meet the required dynamics and concluded that threshold modified comparator serves our purpose best.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信