Matthias Hock, Andreas Hartel, J. Schemmel, K. Meier
{"title":"一种用于神经形态硬件的模拟动态存储器阵列","authors":"Matthias Hock, Andreas Hartel, J. Schemmel, K. Meier","doi":"10.1109/ECCTD.2013.6662229","DOIUrl":null,"url":null,"abstract":"We describe an array of capacitor based cells capable of storing analog voltages and currents for highly configurable large-scale neuromorphic hardware. A novel refresh scheme based on content-addressable memory as well as a slow and simple voltage ramp generator is presented. The circuits have been simulated in a 65nm mixed-signal low power process. Key characteristics are an area consumption of 175 μm2 and a power consumption of less than 125nW per stored value. A prototype chip has been designed and submitted for fabrication.","PeriodicalId":342333,"journal":{"name":"2013 European Conference on Circuit Theory and Design (ECCTD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"An analog dynamic memory array for neuromorphic hardware\",\"authors\":\"Matthias Hock, Andreas Hartel, J. Schemmel, K. Meier\",\"doi\":\"10.1109/ECCTD.2013.6662229\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe an array of capacitor based cells capable of storing analog voltages and currents for highly configurable large-scale neuromorphic hardware. A novel refresh scheme based on content-addressable memory as well as a slow and simple voltage ramp generator is presented. The circuits have been simulated in a 65nm mixed-signal low power process. Key characteristics are an area consumption of 175 μm2 and a power consumption of less than 125nW per stored value. A prototype chip has been designed and submitted for fabrication.\",\"PeriodicalId\":342333,\"journal\":{\"name\":\"2013 European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2013.6662229\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2013.6662229","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analog dynamic memory array for neuromorphic hardware
We describe an array of capacitor based cells capable of storing analog voltages and currents for highly configurable large-scale neuromorphic hardware. A novel refresh scheme based on content-addressable memory as well as a slow and simple voltage ramp generator is presented. The circuits have been simulated in a 65nm mixed-signal low power process. Key characteristics are an area consumption of 175 μm2 and a power consumption of less than 125nW per stored value. A prototype chip has been designed and submitted for fabrication.