基于45nm SOI CMOS的1.0太赫兹单面定向槽天线

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226205

H. Kanaya, Kohei Tasaki, R. Takigawa

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引用次数: 1

摘要

本文设计了一种面向未来1THz频段通信应用的单面定向缝隙天线。该天线采用45 nm SOI CMOS技术实现。该天线由顶部天线层、薄介电中间层和底部浮动金属层组成。为了提高带宽，仿真设计了1个天线阵列，天线增益为6.2 dBi, 1thz时带宽为250GHz 3dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 1⨯2 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.

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来源期刊

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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