实验用InAs/GaAsSb/GaSb TFET作为毫米波探测器的预测性能

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309216

J. Zhang, C. Alessandri, P. Fay, A. Seabaugh, T. Ytterdal, E. Memišević, L. Wernersson

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引用次数: 0

摘要

基于对垂直纳米线InAs/GaAsSb/GaSb隧道场效应晶体管(TFET)最小亚阈值摆幅为48 mV/dec和最高I60为0.31 μA/μm的测量，建立了一个SPICE模型，以实验为基础对纳米线TFET技术进行预测。在30 GHz时，对探测器进行了模拟，结果表明，在零电压附近(VGS = - 0.06 V, VDS = 0.1 V)偏置时，探测器的灵敏度为4.8 kV/W，在偏置条件下，探测器的最大灵敏度超过4000 kV/W。这些结果超过了先前测量的In0.53Ga0.47As/ GaAs0.5Sb0.5异质结TFET超过一个数量级。

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Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS = −0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/ GaAs0.5Sb0.5 heterojunction TFET by over an order of magnitude.

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2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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