G. Ilicali, W. Weber, W. Rosner, L. Dreeskornfeld, J. Hartwich, J. Kretz, T. Lutz, J. Mazellier, M. Stadele, M. Specht, J. R. Luyken, E. Landgraf, F. Hofmann, L. Risch, R. Kasmaier, W. Hansch
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Planar double gate transistors with asymmetric independent gates
Planar double-gate field effect transistors with asymmetric (p++/n++) independent gates down to 55nm physical gate lengths are successfully fabricated. A fabrication concept, epi-before-bonding, is introduced and demonstrated to be highly successful in achieving ultra-thin and planar Si bodies. Various modes of operations are extensively analyzed and compared to 2D simulations. It is experimentally shown that specific off-current requirements can be fulfilled with conventional poly-Si gates.
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