{"title":"GaAs/GaAs/sub 1-x/P/sub x/超晶格的光学性质","authors":"A. Korotov","doi":"10.1109/SMICND.1996.557385","DOIUrl":null,"url":null,"abstract":"Time resolved photoluminescence of the GaAs/GaAs/sub 0.76/P/sub 0.24/ superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical properties of GaAs/GaAs/sub 1-x/P/sub x/ superlattices\",\"authors\":\"A. Korotov\",\"doi\":\"10.1109/SMICND.1996.557385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Time resolved photoluminescence of the GaAs/GaAs/sub 0.76/P/sub 0.24/ superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical properties of GaAs/GaAs/sub 1-x/P/sub x/ superlattices
Time resolved photoluminescence of the GaAs/GaAs/sub 0.76/P/sub 0.24/ superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset.
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