二维负电容场效应晶体管的短沟道效应研究

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 1900-01-01 DOI:10.1109/S3S.2017.8308758

W. You, Chih-Peng Tsai, P. Su

{"title":"二维负电容场效应晶体管的短沟道效应研究","authors":"W. You, Chih-Peng Tsai, P. Su","doi":"10.1109/S3S.2017.8308758","DOIUrl":null,"url":null,"abstract":"In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Investigation of short-channel effects in 2D negative-capacitance field-effect transistors\",\"authors\":\"W. You, Chih-Peng Tsai, P. Su\",\"doi\":\"10.1109/S3S.2017.8308758\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.\",\"PeriodicalId\":333587,\"journal\":{\"name\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2017.8308758\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8308758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在这项工作中，通过数值模拟系统地研究了具有二维材料通道的负电容场效应管(2D-NCFET)中的短通道效应(SCEs)，并得到了理论2D-NCFET亚阈值模型的证实。我们的研究表明，由于漏极耦合对负电容效应的影响，2D-NCFET表现出明显的SCEs。此外，对于给定的等效氧化物厚度(EOT)，高k间层的介电常数可以显著改变短通道2d - ncfet的亚阈值特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigation of short-channel effects in 2D negative-capacitance field-effect transistors

In this work, the short-channel effects (SCEs) in negative-capacitance FETs with 2D-material channel (2D-NCFET) are systematically investigated through numerical simulation corroborated by a theoretical 2D-NCFET subthreshold model. Our study reveals that, due to the impact of drain coupling on the negative-capacitance effect, the 2D-NCFET exhibits distinct SCEs. Additionally, for a given equivalent oxide thickness (EOT), the dielectric constant of the high-K interlayer can significantly alter the subthreshold characteristics of the short-channel 2D-NCFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

自引率

0.00%

发文量