锗沟道无结纳米线晶体管的低温特性

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421519

C. Sun, R. Liang, Lei Xiao, Libin Liu, Jun Xu, Jing Wang

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引用次数: 1

摘要

制备了高性能的锗沟道无结纳米线晶体管(JNTs)，并对其在90 ~ 270 K范围内的低温特性进行了验证。结果表明，泄漏电流比驱动电流对温度更敏感。阈值电压随温度变化的斜率估计为2.5 mV/K。低场迁移率随温度降低而降低，并受到库仑散射和中性缺陷散射的限制。

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Cryogenic Characteristics of Ge channel Junctionless Nanowire Transistors

We fabricated high performance Ge channel junctionless nanowire transistors (JNTs) and demonstrated their cryogenic characteristics from 90 to 270 K. The results show that the leakage current is more sensitive to temperature than drive current. The slope of threshold voltage shift with temperature is estimated to be 2.5 mV/K. Low field mobility decreases with reduced temperature and is found to be limited by both Coulomb scattering and neutral defects scattering.

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来源期刊

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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