双栅无结晶体管的短沟道连续模型

2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI:10.1109/ICCDCS.2014.7016158

B. Cardoso Paz, M. Pavanello, Fernando Avila, A. Cerdeira

{"title":"双栅无结晶体管的短沟道连续模型","authors":"B. Cardoso Paz, M. Pavanello, Fernando Avila, A. Cerdeira","doi":"10.1109/ICCDCS.2014.7016158","DOIUrl":null,"url":null,"abstract":"This work aims to present a continuous model of the drain current for short channel double-gate junctionless transistors, from a charge-based model for long channel double-gate devices. The proposed model is based on the influence of the drain bias in the channel potential and the reduction of the effective channel length in saturation regime, for short channel transistors. To model validation it will be used three dimensional numerical simulations.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Short channel continuous model for double-gate junctionless transistors\",\"authors\":\"B. Cardoso Paz, M. Pavanello, Fernando Avila, A. Cerdeira\",\"doi\":\"10.1109/ICCDCS.2014.7016158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work aims to present a continuous model of the drain current for short channel double-gate junctionless transistors, from a charge-based model for long channel double-gate devices. The proposed model is based on the influence of the drain bias in the channel potential and the reduction of the effective channel length in saturation regime, for short channel transistors. To model validation it will be used three dimensional numerical simulations.\",\"PeriodicalId\":200044,\"journal\":{\"name\":\"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2014.7016158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2014.7016158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本工作旨在从基于电荷的长沟道双栅器件模型出发，提出短沟道双栅无结晶体管漏极电流的连续模型。对于短沟道晶体管，所提出的模型是基于沟道电位中漏极偏置的影响和饱和状态下有效沟道长度的减小。为了验证模型，将使用三维数值模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Short channel continuous model for double-gate junctionless transistors

This work aims to present a continuous model of the drain current for short channel double-gate junctionless transistors, from a charge-based model for long channel double-gate devices. The proposed model is based on the influence of the drain bias in the channel potential and the reduction of the effective channel length in saturation regime, for short channel transistors. To model validation it will be used three dimensional numerical simulations.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

自引率

0.00%

发文量