基于Si鳍外延包覆的高迁移率Si0.55Ge0.45 p沟道finfet的性能和可靠性

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894360

H. Mertens, R. Ritzenthaler, A. Hikavyy, J. Franco, J. Lee, D. Brunco, G. Eneman, L. Witters, J. Mitard, S. Kubicek, K. Devriendt, D. Tsvetanova, A. Milenin, C. Vrancken, J. Geypen, H. Bender, G. Groeseneken, W. Vandervorst, K. Barla, N. Collaert, N. Horiguchi, A. Thean

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引用次数: 12

摘要

我们提出了si0.55 ge0.45包层p沟道finfet的全面研究，包括与平面SiGe量子阱器件的比较。与硅控制器件相比，硅包层finfet的空穴迁移率提高了约2倍，离子/IOFF提高了约2倍，DIBL也得到了改善。在包层厚度低至3nm的情况下，NBTI的可靠性优于等效Si finfet。详细研究了驱动电流和空穴迁移率对SiGe厚度和器件宽度的依赖关系。分析表明，SiGe厚度一致性和外延面控制对于优化SiGe包覆finfet至关重要。

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Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins

We present a comprehensive study of Si0.55Ge0.45-cladded p-channel FinFETs, including a comparison with planar SiGe quantum-well devices. The SiGe-cladded FinFETs exhibit ~2× higher hole mobility, ~2× better ION/IOFF, and improved DIBL compared to Si control devices. Superior NBTI reliability over equivalent Si FinFETs is demonstrated for cladding thicknesses down to 3 nm. The dependencies of drive current and hole mobility on both SiGe thickness and device width are examined in detail. This analysis shows that SiGe thickness conformality and epitaxial facet control are crucial for the optimization of SiGe-cladded FinFETs.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量