超低电压(0.1V)工作的第v个自调节MOSFET和SRAM单元

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894416

A. Ueda, Seungmin Jung, T. Mizutani, Ashok Kumar, T. Saraya, T. Hiramoto

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引用次数: 3

摘要

提出了一种由浮栅组成的第v自调节MOSFET，并成功地实现了第v自调节和SRAM单元在低至0.1V的超低电压下工作。在该器件中，Vth在导通状态下自动降低，在关断状态下自动增加，从而获得高离子/开关比以及在低Vdd下稳定的SRAM工作。实验证明，在6T SRAM电池中，使用第v个自调节非场效应管和pfet，可以获得0.1V的最小工作电压。

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Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell

A V_th self-adjusting MOSFET consisting of floating gate is proposed and the ultra-low voltage operation of the V_th self-adjustment and SRAM cell at as low as 0.1V is successfully demonstrated. In this device, V_th automatically decreases at on-state and increases at off-state, resulting in high I_on/I_off ratio as well as stable SRAM operation at low V_dd. The minimum operation voltage at 0.1V is experimentally demonstrated in 6T SRAM cell with V_th self-adjusting nFETs and pFETs.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量