金属氧化物薄膜晶体管的输出击穿特性及相关退化行为

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984893

Xiaotong Ma, Meng Zhang, Zhendong Jiang, Sunbin Deng, Yan Yan, Guijun Li, Rongsheng Chen, M. Wong, H. Kwok

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引用次数: 0

摘要

研究了金属氧化物薄膜晶体管(TFTs)的输出击穿特性。观察到三种OBD行为，分别对应于关闭状态、阈下区域和开启状态。研究了器件在OBD电压应力作用下的退化行为。OBD应力可以在很短的应力时间内引起严重的器件退化。结合TCAD仿真，初步探讨了其降解机理。

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Output Breakdown Characteristics and the Related Degradation Behaviors in Metal Oxide Thin Film Transistors

Output breakdown (OBD) characteristics of metal oxide thin film transistors (TFTs) is studied. Three kinds of OBD behaviors are observed, corresponding to off state, subthreshold region and on state. The device degradation behaviors under OBD voltage stress is investigated. OBD stress can induce severe device degradation in very short stress time. The degradation mechanism is tentatively discussed, incorporated with TCAD simulation.

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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