碳化硅双极结晶体管的最新进展

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240154

A. K. Agarwa, S. Ryu, J. Richmond, C. Capell, J. Palmour, S. Balachandran, T. Chow, B. Geif, S. Bayne, C. Scozzie, K. Jones

{"title":"碳化硅双极结晶体管的最新进展","authors":"A. K. Agarwa, S. Ryu, J. Richmond, C. Capell, J. Palmour, S. Balachandran, T. Chow, B. Geif, S. Bayne, C. Scozzie, K. Jones","doi":"10.1109/WCT.2004.240154","DOIUrl":null,"url":null,"abstract":"Bipolar junction transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm x 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm x 2 mm devices were tested up to 325 /spl deg/C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 muA at 1000 V and 325 /spl deg/C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Recent progress in SiC bipolar junction transistors\",\"authors\":\"A. K. Agarwa, S. Ryu, J. Richmond, C. Capell, J. Palmour, S. Balachandran, T. Chow, B. Geif, S. Bayne, C. Scozzie, K. Jones\",\"doi\":\"10.1109/WCT.2004.240154\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bipolar junction transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm x 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm x 2 mm devices were tested up to 325 /spl deg/C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 muA at 1000 V and 325 /spl deg/C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.240154\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

双极结晶体管(BJT)和集成达灵顿对已经在4H-SiC上得到了发展。在室温下，3mm × 3mm的bjt在正向降为1.2 V时的导通电流为20a。较小的2mm x 2mm器件测试温度高达325 /spl度/C。导通电阻随温度升高而增大，电流增益随温度升高而减小。在1000 V和325 /spl度/C条件下，反向泄漏电流小于40 muA。1000v, 5a的感应开关显示出极快的通断行为。

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Recent progress in SiC bipolar junction transistors

Bipolar junction transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm x 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm x 2 mm devices were tested up to 325 /spl deg/C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 muA at 1000 V and 325 /spl deg/C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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