氡对线键存储器软错误率的影响

2010 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2010-10-01 DOI:10.1109/IIRW.2010.5706506

R. Wong, P. Su, S. Wen, Brendan Dwyer McNally, S. Coleman

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引用次数: 1

摘要

当氡浓度增加3000X时，软错误率不受影响。包装材料和成型化合物的厚度似乎提供了一个足够的屏障，以尽量减少氡的扩散。环境氡水平似乎对目前在这些装置中观察到的软错误率没有贡献。后续实验可以在倒装芯片上完成，以确定氡是否会扩散到倒装芯片封装中。

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The effect of Radon on soft error rates for wire bonded memories

The soft error rate of the wire bonded memory was not affected by the 3000X increase in the Radon concentration. The packaging material and thickness of the molding compound appear to provide a sufficient barrier to minimize Radon diffusion. Ambient Radon levels do not appear to contribute to current soft error rate observed in these devices. Follow up experiments may be completed on flip chip device to determine Radon would diffuse into the flip chip package.

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来源期刊

2010 IEEE International Integrated Reliability Workshop Final Report

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