CdS纳米线阵列的场发射和光增强场发射研究

2011 IEEE International Vacuum Electronics Conference (IVEC) Pub Date : 2011-02-21 DOI:10.1109/IVEC.2011.5746893

P. G. Chavan, Satish S. Badadhe, I. Mulla, M. More, D. Joag

{"title":"CdS纳米线阵列的场发射和光增强场发射研究","authors":"P. G. Chavan, Satish S. Badadhe, I. Mulla, M. More, D. Joag","doi":"10.1109/IVEC.2011.5746893","DOIUrl":null,"url":null,"abstract":"The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ∼ 68 µA/cm2 has been drawn at the applied electric field of ∼ 5.2 V/μm. The field emission current-time stability measurements depict that the emission current is stable over the period of measurement (3h). The photo-enhanced field emission study shows the photo-switching behavior with rise in the current level to ∼ 3μA for the preset value of ∼ 1μA repetitively.","PeriodicalId":106174,"journal":{"name":"2011 IEEE International Vacuum Electronics Conference (IVEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Field emission and photo-enhanced field emission investigations of CdS nanowires array\",\"authors\":\"P. G. Chavan, Satish S. Badadhe, I. Mulla, M. More, D. Joag\",\"doi\":\"10.1109/IVEC.2011.5746893\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ∼ 68 µA/cm2 has been drawn at the applied electric field of ∼ 5.2 V/μm. The field emission current-time stability measurements depict that the emission current is stable over the period of measurement (3h). The photo-enhanced field emission study shows the photo-switching behavior with rise in the current level to ∼ 3μA for the preset value of ∼ 1μA repetitively.\",\"PeriodicalId\":106174,\"journal\":{\"name\":\"2011 IEEE International Vacuum Electronics Conference (IVEC)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Vacuum Electronics Conference (IVEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVEC.2011.5746893\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Vacuum Electronics Conference (IVEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2011.5746893","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用热蒸发技术在金图案硅衬底上生长CdS纳米线阵列。利用扫描电镜(SEM)和透射电镜(TEM)对合成的CdS纳米线薄膜的表面形貌和结晶度进行了分析。研究了平行板二极管结构下CdS纳米线阵列的场发射特性。在外加电场为~ 5.2 V/μm时，产生了~ 68 μ A/cm2的高电流密度。场发射电流-时间稳定性测量表明，发射电流在测量期间(3h)是稳定的。光增强场发射研究表明，在预设值为~ 1μA时，随着电流水平上升到~ 3μA，光开关行为不断增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Field emission and photo-enhanced field emission investigations of CdS nanowires array

The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ∼ 68 µA/cm2 has been drawn at the applied electric field of ∼ 5.2 V/μm. The field emission current-time stability measurements depict that the emission current is stable over the period of measurement (3h). The photo-enhanced field emission study shows the photo-switching behavior with rise in the current level to ∼ 3μA for the preset value of ∼ 1μA repetitively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 IEEE International Vacuum Electronics Conference (IVEC)

自引率

0.00%

发文量