{"title":"界面氮化的多晶硅-发射极双极晶体管","authors":"F. Nouri, B. Scharf","doi":"10.1109/BIPOL.1992.274077","DOIUrl":null,"url":null,"abstract":"Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polysilicon-emitter bipolar transistors with interfacial nitride\",\"authors\":\"F. Nouri, B. Scharf\",\"doi\":\"10.1109/BIPOL.1992.274077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.<<ETX>>\",\"PeriodicalId\":286222,\"journal\":{\"name\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1992.274077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polysilicon-emitter bipolar transistors with interfacial nitride
Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
