Ni(Pt)Si薄膜在Si衬底上的形成及其电学特性

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981530

Yong-Zhao Han, Yingyu Qu, Yu-Long Jiang, Bei Xu, Yong-Feng Cao, G. Ru, Bingzong Li, P. K. Chu

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引用次数: 1

摘要

研究了在Si[100]衬底上溅射的Ni/Pt双层和Pt/Ni双层的固相硅化。研究了在NiSi薄膜中添加Pt对其热稳定性增强的影响。结果表明，Ni(Pt)Si向NiSi/sub 2/相变的温度比没有Pt作为封顶层或中间层的Ni/Si体系延迟了100℃以上。Ni(Pt)Si/n-Si(111)的表观肖特基势垒高度随Pt含量的变化而变化，在500-800/spl℃的硅化温度下具有良好的电特性。

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Ni(Pt)Si thin film formation and its electrical characteristics with Si substrate

The solid phase silicidations for the bilayers of Ni/Pt and Pt/Ni sputtered on Si[100] substrates were studied. The effect of Pt addition in the NiSi film on its thermal stability enhancement was investigated. The results show that the phase transformation from Ni(Pt)Si to NiSi/sub 2/ was delayed to higher temperature than the Ni/Si system without Pt as a capping- or inter-layer by more than 100/spl deg/C. The apparent Schottky barrier height of Ni(Pt)Si/n-Si(111) is modulated with the Pt content, and the electrical characteristic is good in the silicidation temperature of 500-800/spl deg/C.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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