离子注入ALD HfO/sub - 2/栅极电介质中氮的掺入[MOSFET应用]

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367760

H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff

{"title":"离子注入ALD HfO/sub - 2/栅极电介质中氮的掺入[MOSFET应用]","authors":"H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff","doi":"10.1109/DRC.2004.1367760","DOIUrl":null,"url":null,"abstract":"A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]\",\"authors\":\"H. Li, T. Pompl, C. Young, T. Rhoad, J. Saulters, J. Peterson, M. Gardner, G.A. Brown, G. Bersuker, P. Zeitzoff, J. Price, P. Hung, A. Diebold, H. Huff\",\"doi\":\"10.1109/DRC.2004.1367760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了在ALD HfO/ sub2 /中注入N/ sub2 /离子制备HfON的工艺。结果表明，氮/亚氮/氮注入可形成高质量的HfON，表明氮注入可作为一种替代的高钾氮化技术。该工艺成功地集成到传统的CMOS流程中，与HfO/sub 2/相比，HfON的电学和可靠性结果显示，在脉冲ids - vg测量中，Vt移减少了10倍，栅极泄漏减少了70%。此外，HfON的EOT、电子/空穴迁移率、TDDB和亚阈值斜率也优于HfO/ sub2 /。提出了一个模型来解释这一结果，该模型将改善归因于氮的存在使HfO/ sub2 /膜中的缺陷态(氧空位)减少。

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N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

A fabrication process for HfON, using ion implantation of N/sub 2/ in ALD HfO/sub 2/, was demonstrated. Results showed that a good quality HfON could be formed by N/sub 2/ implantation, which suggests nitrogen implantation can be an alternative high-k nitridation technique. This process was successfully integrated into a traditional CMOS flow and the electrical and reliability results of HfON, as compared to HfO/sub 2/, showed 10 times less Vt shift in the pulsed Id-Vg measurement and up to 70% gate leakage reduction. In addition, EOT, electron/hole mobility, TDDB and subthreshold slope of HfON also performed better than those of HfO/sub 2/. A model is proposed to explain the result by attributing the improvement to the reduction of defect states (oxygen vacancies) in the HfO/sub 2/ film by the presence of N in the HfON film.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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