在Si衬底上使用常耗尽AlGaN GaN外延层的Planer型E-mode MOS-HEMT中功率开关应用的基本特性演示

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147503

T. Nanjo, S. Yamamoto, T. Imazawa, A. Kiyoi, T. Shinagawa, T. Watahiki, N. Miura, M. Furuhashi, K. Nishikawa, T. Egawa

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引用次数: 0

摘要

使用完全耗尽的AlGaN/GaN外延层(称为EID (extrically electron Induced by Dielectric))的平板型hemt，由于其无损伤的制造工艺，有望实现稳定可靠的e模式操作。本文研究了用于功率开关应用的eid - hemt的基本特性。所制备的eid - hemt具有e模式工作，阈值电压为0.5 V，导通电阻为210\ \mathrm{m}\Omega$，击穿电压为1.1 kV。此外，还演示了清晰的400v / 10a开关操作，没有任何有害症状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

Planer-type HEMTs using fully depleted AlGaN/GaN epitaxial layers called EID (Extrinsically electron Induced by Dielectric) AlGaN/GaN MOS-HEMTs are expected to be stable and reliable E-mode operation thanks to its damage-less fabrication process. Fundamental characteristics of the EID-HEMTs for power switching applications were investigated in this study. The fabricated EID-HEMTs exhibited E-mode operation with threshold voltage of 0.5 V, on-resistance of $210\ \mathrm{m}\Omega$ and break-down voltage of 1.1 kV. Furthermore, clear 400 V/10 A switching operation without any harmful symptoms was also demonstrated.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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