表征多层及其接口的一些技术

P. Jonnard
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引用次数: 1

摘要

我们描述了一些破坏性和非破坏性的技术,可以用来检查多层,特别是他们的界面。所提出的非破坏性技术允许获得样品的电子结构,然后通过分析占据(x射线发射和光电发射光谱)或未占据(x射线吸收或电子能量损失光谱)的状态来确定多层材料中元素的化学状态。在破坏性的技术中,我们介绍了二次离子质谱法和透射电子显微镜,这些技术可以提供一些关于样品结构质量的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Some techniques to characterize multilayers and their interfaces
We describe some destructive and non-destructive techniques that can be useful to examine multilayers and particularly their interfaces. The presented non-destructive techniques allow obtaining the electron structure of the sample and then determine the chemical states of the elements in the multilayer from the analysis of the occupied (x-ray emission and photoemission spectroscopies) or unoccupied (x-ray absorption or electron energy loss spectroscopies) states. Among the destructive techniques we introduce secondary ion mass spectrometry and transmission electron microscopy that bring some information about the structural quality of the samples.
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