E. Laskin, P. Chevalier, B. Sautreuil, S. Voinigescu
{"title":"一个140 ghz的双向带收发器，具有振幅和频率调制，工作距离为几米","authors":"E. Laskin, P. Chevalier, B. Sautreuil, S. Voinigescu","doi":"10.1109/BIPOL.2009.5314245","DOIUrl":null,"url":null,"abstract":"This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm2, and consumes 1.5 W.","PeriodicalId":267364,"journal":{"name":"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"62","resultStr":"{\"title\":\"A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters\",\"authors\":\"E. Laskin, P. Chevalier, B. Sautreuil, S. Voinigescu\",\"doi\":\"10.1109/BIPOL.2009.5314245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm2, and consumes 1.5 W.\",\"PeriodicalId\":267364,\"journal\":{\"name\":\"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"62\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2009.5314245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2009.5314245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters
This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm2, and consumes 1.5 W.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
