基于自适应体偏置的SRAM细胞变异缓解技术

2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) Pub Date : 2012-12-01 DOI:10.1109/codis.2012.6422150

S. Kushwaha, S. Prasad, A. Islam

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引用次数: 0

摘要

本文提出了一种设计可在近阈值区域工作的可变性感知SRAM单元的电路技术。所提出的单元结构类似于标准的6T SRAM单元，除了DTMOS用于接入场效应管和DSBB(动态交换体偏置)方案用于单元的反馈和前馈逆变器。在这项工作中，对所提出设计的各种设计指标进行了评估，并与传统6T在等器件面积上进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Variation mitigation technique in SRAM cell using adaptive body bias

This paper presents a circuit technique for designing a variability aware SRAM cell operable at near threshold region. The architecture of the proposed cell is similar to the standard 6T SRAM cell with the exception that DTMOS is used for the access FETs and DSBB (dynamically swapped body bias) scheme is used for feedback and feed-forward inverters of the cell. In this work, various design metrics of the proposed design are assessed and compared with conventional 6T at iso-device area.

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2012 International Conference on Communications, Devices and Intelligent Systems (CODIS)

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