在CMOS上实现每秒千兆毫米波收发器

B. Yang, Y. Mo, K. Wang, Y. Feng, B. Wicks, C. Ta-Minh, F. Zhang, Z. Liu, C. Liu, G. Felic, P. Nadagouda, T. Walsh, E. Skafidas
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引用次数: 12

摘要

现代系统要求收发器提供千兆速度,尺寸更小,功耗和成本更低。这促使研究开发片上收发器和封装收发器技术。毫米波电子学的最新进展意味着系统的重要部分现在可以集成到单个基板或封装上。为了实现低成本和高数字集成度,CMOS是首选的工艺,因为CMOS是构建数字电路的标准和成本有效的工艺。不幸的是,与其他更昂贵的工艺(如SiGe和GaAs)相比,CMOS具有更大的工艺可变性,更低的载流子迁移率常数和更小的器件击穿电压。这使得毫米波无线收发器的芯片设计特别具有挑战性。本文概述了基于CMOS的千兆收发器芯片的发展,并概述了所制元件的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implementation of a Gigabit Per Second Millimetre Wave Transceiver on CMOS
Modern systems require transceivers that deliver gigabit speeds, are smaller in size, and have lower power consumption and cost. This motivates research to develop transceiver-on-chip and transceiver-in-a-package technologies. Recent advances in millimetre wave electronics have meant that significant portions of the system can now be integrated onto a single substrate or package. In order to achieve low costs and high digital integration CMOS is the process of choice as CMOS is the standard and a cost effective process for building digital circuits. Unfortunately compared to other much more expensive processes such as SiGe and GaAs, CMOS has greater process variability, lower carrier mobility constants, and smaller device breakdown voltages. This makes millimetre wave wireless transceiver on a chip design particularly challenging. In this paper we outline the development of a gigabit transceiver-on-chip using CMOS and outline the performance of the fabricated components.
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