GaInP/GaAs异质结双极晶体管的大信号模型

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713730

Yuxia Shi, Yu He, Lin Wang, Yan Wang

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引用次数: 3

摘要

本文基于Gummel-Poon (GP)模型，提出了一种简单的基于物理的GaInP/GaAs异质结双极晶体管(HBTs)大信号模型。通过考虑电位尖峰效应和负微分迁移率，改进了电流和传递时间模型。与UCSD HBT和AgilentHBT模型不同的是，我们的模型只使用了46个参数。在较宽的工作偏置范围内，直流特性和s参数曲线与实验数据吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A large-signal model for GaInP/GaAs heterojunction bipolar transistors

Based on the Gummel-Poon (GP) model, a simple and physical-based large-signal model for GaInP/GaAs heterojunction bipolar transistors (HBTs) is presented in this paper. We improve the current and transit time model by considering the potential spike effect and negative differential mobility. Different from the UCSD HBT and AgilentHBT models, only 46 parameters are used in our model. The DC characteristics and S-parameter curves are well consistent with the experimental data over a wide range of the operating bias.

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来源期刊

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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