N. Nidhi, S. Dasgupta, J. Lu, F. Wu, S. Keller, J. Speck, U. Mishra
{"title":"外源gm记录为1105 mS/mm的自对准n极性GaN/InAlN hemt的阱相关延迟分析","authors":"N. Nidhi, S. Dasgupta, J. Lu, F. Wu, S. Keller, J. Speck, U. Mishra","doi":"10.1109/DRC.2011.5994531","DOIUrl":null,"url":null,"abstract":"Ga-polar InAlN-based charge-inducing barrier for HEMTs have been recently demonstrated as a viable technology for high frequency applications due to high polarization charge and hence, low resistance channels [1,2]. In this paper, we report on MBE-grown N-polar GaN/InAlN HEMTs with excellent DC and RF performance. There exists a discrepancy in the DC and RF data for N-polar MBE InAlN devices which is explained through several measurements and analysis and possible solutions are discussed.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm\",\"authors\":\"N. Nidhi, S. Dasgupta, J. Lu, F. Wu, S. Keller, J. Speck, U. Mishra\",\"doi\":\"10.1109/DRC.2011.5994531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ga-polar InAlN-based charge-inducing barrier for HEMTs have been recently demonstrated as a viable technology for high frequency applications due to high polarization charge and hence, low resistance channels [1,2]. In this paper, we report on MBE-grown N-polar GaN/InAlN HEMTs with excellent DC and RF performance. There exists a discrepancy in the DC and RF data for N-polar MBE InAlN devices which is explained through several measurements and analysis and possible solutions are discussed.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm
Ga-polar InAlN-based charge-inducing barrier for HEMTs have been recently demonstrated as a viable technology for high frequency applications due to high polarization charge and hence, low resistance channels [1,2]. In this paper, we report on MBE-grown N-polar GaN/InAlN HEMTs with excellent DC and RF performance. There exists a discrepancy in the DC and RF data for N-polar MBE InAlN devices which is explained through several measurements and analysis and possible solutions are discussed.
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