{"title":"扫描毫米波光束对光学材料各向异性的研究","authors":"A. Laurinavičius, V. Derkach, Tomas Anbinderis","doi":"10.1117/12.815946","DOIUrl":null,"url":null,"abstract":"Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. Same results of the homogeneity measurements for dielectric wafers according to dielectric constant anisotropy are presented. The measurement technique sensitivity is discussed.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"52 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Study of optical material anisotropy using scanning millimeter wave beam\",\"authors\":\"A. Laurinavičius, V. Derkach, Tomas Anbinderis\",\"doi\":\"10.1117/12.815946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. Same results of the homogeneity measurements for dielectric wafers according to dielectric constant anisotropy are presented. The measurement technique sensitivity is discussed.\",\"PeriodicalId\":273853,\"journal\":{\"name\":\"International Conference on Advanced Optical Materials and Devices\",\"volume\":\"52 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Optical Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.815946\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Optical Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.815946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of optical material anisotropy using scanning millimeter wave beam
Millimeter wave bridge technique for non-destructive material homogeneity characterization is described. The idea of this technique is the local excitation of the millimeter waves in the testing material and the measurement of the transmitted (reflected) wave amplitude and phase in different places of it, i.e. the material plate is scanned by the beam of the millimeter waves. Same results of the homogeneity measurements for dielectric wafers according to dielectric constant anisotropy are presented. The measurement technique sensitivity is discussed.