Philippe Renaud, A. Gendron, M. Bafleur, N. Nolhier
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引用次数: 10
摘要
介绍了一种用于高压I/ o ESD保护的新型器件。除了使用特定的设计准则外，该概念还包括在同一结构内将开放式横向PNP与垂直雪崩二极管耦合在一起，以获得非snapback行为以及非常好的Ron能力(~1Omega)。高电压I/ o保护与窄ESD设计窗口范围从80 V到100 V，可以在151*140 mum2的缩小表面上实现，这是最先进的突破。
High robustness PNP-based structure for the ESD protection of high voltage I/Os in an advanced smart power technology
A new device dedicated to the ESD protection of high voltage I/Os is presented. In addition to the use of specific design guidelines, the concept consists in coupling an open-base lateral PNP with a vertical avalanche diode within the same structure to obtain a non-snapback behavior together with very good Ron capabilities (~1Omega). The protection of high voltage I/Os with a narrow ESD design window ranging from 80 V to 100 V can be implemented in a reduced surface of 151*140 mum2, which represents a state-of-the-art breakthrough.
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