FinFET技术在低功率混合信号应用中的适用性

2006 IEEE International Conference on IC Design and Technology Pub Date : 2006-08-14 DOI:10.1109/ICICDT.2006.220796

B. Parvais, C. Gustin, V. De Heyn, J. Loo, M. Dehan, V. Subramanian, A. Mercha, N. Collaert, R. Rooyackers, M. Jurczak, P. Wambacq, S. Decoutere

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引用次数: 21

摘要

无线应用需要在同一芯片上实现数字/模拟/射频功能的低功耗技术。FinFET技术具有良好的数字、模拟和低频噪声性能，是平面CMOS的竞争替代品。同时，本文也首次展示了很好的匹配性能。此外，finfet对于低于10ghz的低功耗应用具有吸引力。评估了Fin变量的适用性并给出了权衡。首次展示了用于低功耗宽带应用的大调谐范围(1-8.5 GHz)无电感振荡器

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Suitability of FinFET technology for low-power mixed-signal applications

Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time

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2006 IEEE International Conference on IC Design and Technology

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