一种基于隧道辅助冲击电离前沿的新型功率皮秒半导体开关

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Pub Date : 2002-06-30 DOI:10.1109/MODSYM.2002.1189510

P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov

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引用次数: 3

摘要

我们提出了一种新型的闭合半导体开关，该开关基于一种新的物理机制-超高速隧道辅助冲击电离锋的传播。我们对所提出的器件的开关瞬态进行了数值模拟。数值结果表明，在这种机制下，可以形成坡度高达500 kV/ns、振幅高达8 kV的电压脉冲。这为脉冲功率电子学开辟了新的领域。

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A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

We propose a novel type of closing semiconductor switches based on a new physical mechanism-the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics.

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Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.

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