用于40 Gbit/s及以上的InP HEMT光波通信ic

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773694

E. Sano

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引用次数: 3

摘要

超高速集成电路技术是实现超大容量光通信系统的关键技术之一。要达到超过40 Gbit/s的工作区域，需要在电路和封装设计方面取得技术突破，并提高晶体管性能。本文介绍了0.1 /spl mu/m栅极InP HEMT、新颖的电路设计以及为提高电路速度而开发的宽带封装技术。我们利用这些技术制作了40 Gbit/s光波通信集成电路。本文还介绍了向100gbit /s运行过渡过程中存在的问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InP HEMT lightwave communication ICs for 40 Gbit/s and beyond

Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40 Gbit/s operating region. This paper describes a 0.1 /spl mu/m gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40 Gbit/s lightwave communication ICs. This paper also describes the problems in moving toward 100 Gbit/s operation.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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