{"title":"集成碳纳米管的纳米力学结构","authors":"H. Miyashita, T. Ono, M. Esashi","doi":"10.1109/SENSOR.2003.1215283","DOIUrl":null,"url":null,"abstract":"In this paper, we report the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposed silicon electrodes with a narrow gap (0.5/spl sim/5 /spl mu/m), which was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with an application of the voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to another one. From the measurement of current-voltage (I-V) characteristics the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to be about 4/spl times/10/sup -5/ /spl Omega//spl middot/cm. This nanofabrication technique will be applicable to the nanomechanical elements integrated an individual CNT.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Nanomechanical structures with an integrated carbon nanotube\",\"authors\":\"H. Miyashita, T. Ono, M. Esashi\",\"doi\":\"10.1109/SENSOR.2003.1215283\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposed silicon electrodes with a narrow gap (0.5/spl sim/5 /spl mu/m), which was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with an application of the voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to another one. From the measurement of current-voltage (I-V) characteristics the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to be about 4/spl times/10/sup -5/ /spl Omega//spl middot/cm. This nanofabrication technique will be applicable to the nanomechanical elements integrated an individual CNT.\",\"PeriodicalId\":196104,\"journal\":{\"name\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2003.1215283\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2003.1215283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanomechanical structures with an integrated carbon nanotube
In this paper, we report the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposed silicon electrodes with a narrow gap (0.5/spl sim/5 /spl mu/m), which was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with an application of the voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to another one. From the measurement of current-voltage (I-V) characteristics the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to be about 4/spl times/10/sup -5/ /spl Omega//spl middot/cm. This nanofabrication technique will be applicable to the nanomechanical elements integrated an individual CNT.