GaAsN中电子态的光学研究

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237320

X.D. Luo, C. Yang, J. Huang, Z. Xu, J. Liu, W. Ge, Y. Zhang, A. Mascarenhas, H. Xin, C. Tu

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引用次数: 0

摘要

通过连续波光致发光(PL)、脉冲波激发PL和时间分辨PL研究了具有小N成分(x<1%)的GaAs/sub - 1-x/N/sub -x/合金和GaAsN/GaAs量子阱(QWs)。在PL光谱中，在通常报道的N相关发射的高能量侧观察到额外的跃迁。通过测量PL对温度和激发功率的依赖性，确定了新的PL峰是GaAsN中合金带边相关重组和QWs中离域跃迁的转变。PL动力学进一步证实了其带边态的固有性质，而不是与n相关的束缚态。

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Optical study of electronic states in GaAsN

GaAs/sub 1-x/N/sub x/ alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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