{"title":"用于深亚微米CMOS的高顺应性输入输出调节体驱动电流镜","authors":"M.W. Murphy, E. El-Masry, A. Elshurafa","doi":"10.1109/ICM.2006.373642","DOIUrl":null,"url":null,"abstract":"A current mirror circuit that uses body-driven MOSFETs to achieve an ultra-low input and output voltage is presented. High-gain amplifiers, suitable for a deep submicron process, are used to provide matching as well as input and output regulation. Simulation results were verified with measurements performed on a fabricated chip using the 90-nm CMOS process from ST-Microelectronics.","PeriodicalId":284717,"journal":{"name":"2006 International Conference on Microelectronics","volume":"236 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A High Compliance Input and Output Regulated Body-Driven Current Mirror for Deep-Submicron CMOS\",\"authors\":\"M.W. Murphy, E. El-Masry, A. Elshurafa\",\"doi\":\"10.1109/ICM.2006.373642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A current mirror circuit that uses body-driven MOSFETs to achieve an ultra-low input and output voltage is presented. High-gain amplifiers, suitable for a deep submicron process, are used to provide matching as well as input and output regulation. Simulation results were verified with measurements performed on a fabricated chip using the 90-nm CMOS process from ST-Microelectronics.\",\"PeriodicalId\":284717,\"journal\":{\"name\":\"2006 International Conference on Microelectronics\",\"volume\":\"236 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Conference on Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2006.373642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Conference on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2006.373642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A High Compliance Input and Output Regulated Body-Driven Current Mirror for Deep-Submicron CMOS
A current mirror circuit that uses body-driven MOSFETs to achieve an ultra-low input and output voltage is presented. High-gain amplifiers, suitable for a deep submicron process, are used to provide matching as well as input and output regulation. Simulation results were verified with measurements performed on a fabricated chip using the 90-nm CMOS process from ST-Microelectronics.
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