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引用次数: 0
摘要
集成电路受到的辐射影响之一是总电离剂量（TID）效应。TID 效应是一种累积效应，在辐射时间内不断积累，可能导致受辐射集成电路的功能失效。在本文中，我们提出了一种新的系统方法，用于开发针对块状 FET 的预测性 TID 感知模型。利用我们的方法开发的 TID 感知模型可使电路设计人员预测其电路在暴露于高辐射剂量时的预期最坏性能下降情况。
New Proposed Methodology for Radiation Hardening By Design of MOS Circuits
One of the radiation effects on ICs is the Total Ionizing Dose (TID) effects. TID effects are accumulative effects that build up during the exposure time and may cause a functionality failure for the exposed ICs. In this paper, we propose a new systematic methodology for developing a predictive TID-aware models for bulk FETs. TID-aware models developed using our methodology enable circuit designers to predict the expected worst case performance degradation of their circuits if exposed to high radiation doses.
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