一种用于超低功耗单片移动处理器的1.92 μs唤醒时间厚栅氧化电源开关技术

2007 IEEE Symposium on VLSI Circuits Pub Date : 2007-06-14 DOI:10.1109/VLSIC.2007.4342685

K. Fukuoka, O. Ozawa, R. Mori, Y. Igarashi, T. Sasaki, T. Kuraishi, Y. Yasu, K. Ishibashi

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引用次数: 13

摘要

介绍了一种控制厚栅氧化电源开关涌流和唤醒时间的方法。抑制PVT上涌流的变化允许更短的唤醒时间，这可以减少移动处理器中的泄漏电流。唤醒时间为1.92 μs，在应用CPU域内可减少96.9%的漏电流。检测涌流表明该技术控制准确。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1.92 μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors

A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92 μs and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique.

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2007 IEEE Symposium on VLSI Circuits

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