模拟存储器的自动电荷修改系统架构

Hector X. Roman, G. Serrano
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引用次数: 6

摘要

本文介绍了一种模拟存储器自动电荷修改的系统结构。所提出的电路使用恒定电荷注入方案以及负反馈回路,以允许浮动门晶体管的片上自动编程到所需的目标值。此外,通过参数无关的目标电压发生器电路实现了模拟存储器的阵列编程。在0.5 μ m CMOS工艺原型IC上的实验结果证明了该方法的可行性,并给出了单器件的片上编程和存储器阵列的自动编程结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A system architecture for automated charge modification of analog memories
This paper describes a system architecture for automated charge modification of analog memories. The proposed circuit uses a constant charge injection scheme along with a negative feedback loop to allow automated on-chip programming of floating-gate transistors to a desired target value. In addition, array programming of analog memories is enabled with a parameter independent target voltage generator circuit. Feasibility of the proposed approach is demonstrated with experimental results from a 0.5µm CMOS process prototype IC. Results for onchip programming of a single device and automated programming of an array of memories are presented.
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