低压多标准无线接收机差分反馈CG LNA拓扑分析与设计

P. Renukaswamy, V. Pasupureddi, J. Sturm
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引用次数: 4

摘要

本文介绍了用于低压多标准工作的差分反馈共门(CG)低噪声放大器(LNA)拓扑结构的设计和分析。本文提出的定性和定量分析表明,与通常认为正负反馈更好的观点相比,使用负交叉耦合反馈的差分CG LNA可以获得最佳增益(S21)、低噪声系数(NF)和改进的线性度。正负反馈CG LNA增加了S21,但不一定改善NF和线性度,特别是对于低电源电压多标准射频接收机前端。这是由于在100 nm以下的CMOS技术中,电源电压的降低和其他二阶效应的显著增加,导致需要带阻性负载的CG LNA的多标准接收器的设计困难。为了验证本文的分析,设计了一个1.2 V, 65 nm的CMOS差分负反馈电容交叉耦合LNA。原理图仿真结果表明,所实现的65 nm CMOS差分电容交叉耦合CG LNA最大S21为18.03 dB,最小NF为2.25 dB,输入参考三阶截距点(IIP3)最大S21为-3.76 dBm,输入匹配功耗为5.17 mW (S11)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis and Design of Differential Feedback CG LNA Topologies for Low Voltage Multistandard Wireless Receivers
This work presents the design and analysis of differential feedback common gate (CG) Low Noise Amplifier (LNA) topologies for low voltage multistandard operation. The qualitative and quantitative analysis presented in this paper establishes that the optimum gain (S21), low Noise Figure (NF) and improved linearity can be achieved in a differential CG LNA using negative cross-coupled feedback compared to the common belief that a positive-negative feedback is superior. The positive-negative feedback CG LNA increases S21 but not necessarily improves the NF and linearity, especially for low supply voltage multistandard RF receiver frontends. This is dueto the reduced supply voltage and profound increase of other second order effects in sub-100 nm CMOS technologies, leading to difficulties in the design of multistandard receivers where CG LNA with resistive load is needed. To prove the analysis presented in this paper, a 1.2 V, 65 nm CMOS differential negative feedback capacitor cross-coupled LNA is designed. The schematic simulation results of the implemented differential capacitor cross-coupled CG LNA in 65 nm CMOS achieves maximum S21 of 18.03 dB, minimum NF of 2.25 dB, input referred third order intercept point (IIP3) at maximum S21 of -3.76 dBm and 5.17 mW of power consumption with input matching (S11).
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