通过多路tsv缓解3D ic中的分区、路由和良率问题

Michael Buttrick, S. Kundu
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引用次数: 1

摘要

垂直堆叠集成电路在国际半导体技术路线图中占有重要地位,3D集成电路缩短了全球互连长度,允许混合技术(包括DRAM和闪存),实现了硅的重用,并提供了功耗,性能和成本效益。然而,由于制造和可靠性问题,芯片堆叠需要称为硅通孔(tsv)的内部芯片互连,其数量往往有限。这个限制限制了系统级的分区,影响了tsv使用的路由区域,并降低了垂直堆叠的好处。在这里,我们提出了一种方法来增加三维集成电路中芯片间连接的有效数量,以减轻这种限制。在提出的解决方案中,源自一个芯片的两个信号由系统时钟复用,并由目标芯片上的正负边触发触发器组合恢复。还提出了一个扩展,其中的信号不需要在同一模具上发起。这种多路复用tsv的方法允许在很小的面积开销或固有性能开销的情况下将芯片间连接增加一倍。结果表明,这个简单的方案在许多设计中释放了3D的全部潜力,否则这是不可能的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mitigating Partitioning, Routing, and Yield Concerns in 3D ICs by Multiplexing TSVs
Vertical stacking of integrated circuits has figured prominently in the International Technology Roadmap of Semiconductors. 3D ICs reduce global interconnect lengths, allow mixed technologies including DRAM and Flash, enables silicon reuse, and delivers power, performance and cost benefits. However, die-stacking requires inter-die interconnects known as through silicon vias (TSVs) that tend to be limited in number due to manufacturing and reliability concerns. This limitation constrains partitioning at the system level, affects routing area used by TSVs, and diminishes the benefit of vertical stacking. Here we present a means to increase the effective number of inter-die connections in 3D integrated circuits to mitigate such limitations. In the proposed solution, two signals originating in one die are multiplexed by the system clock and recovered by a combination of positive and negative edge-triggered flip-flops on the destination die. Also proposed is an extension where the signals need not originate on the same die. This method of multiplexing TSVs allows for the doubling of inter-die connections with very little area overhead or intrinsic performance overhead. Results show that this simple scheme unlocks the full potential of 3D in many designs which would not have been possible otherwise.
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