温度对FinFET晶体管开/关电流比的影响

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2017-08-01 DOI:10.1109/RSM.2017.8069160

Y. Hashim

{"title":"温度对FinFET晶体管开/关电流比的影响","authors":"Y. Hashim","doi":"10.1109/RSM.2017.8069160","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the working temperature effect on ON/OFF current ratio of FinFET transistor and the prospect of using it as a temperature nano-sensor. The characteristics of the FinFET transistors were simulated using MUGFET simulation tool at different working temperature. Output characteristics with a working temperature range (−25°C to 125°C) were simulated. Variation of ON current to OFF current ratio (Ion/Ioff) with working temperature was investigated.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Temperature effect on ON/OFF current ratio of FinFET transistor\",\"authors\":\"Y. Hashim\",\"doi\":\"10.1109/RSM.2017.8069160\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates the working temperature effect on ON/OFF current ratio of FinFET transistor and the prospect of using it as a temperature nano-sensor. The characteristics of the FinFET transistors were simulated using MUGFET simulation tool at different working temperature. Output characteristics with a working temperature range (−25°C to 125°C) were simulated. Variation of ON current to OFF current ratio (Ion/Ioff) with working temperature was investigated.\",\"PeriodicalId\":215909,\"journal\":{\"name\":\"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2017.8069160\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2017.8069160","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文论证了工作温度对FinFET晶体管开/关电流比的影响，并展望了其作为温度纳米传感器的应用前景。利用MUGFET仿真工具对不同工作温度下FinFET晶体管的特性进行了仿真。模拟了工作温度范围(- 25°C至125°C)的输出特性。研究了开关电流比(Ion/Ioff)随工作温度的变化规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Temperature effect on ON/OFF current ratio of FinFET transistor

This paper demonstrates the working temperature effect on ON/OFF current ratio of FinFET transistor and the prospect of using it as a temperature nano-sensor. The characteristics of the FinFET transistors were simulated using MUGFET simulation tool at different working temperature. Output characteristics with a working temperature range (−25°C to 125°C) were simulated. Variation of ON current to OFF current ratio (Ion/Ioff) with working temperature was investigated.

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2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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