用AsH3掺杂硅中的砷原子层

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874638

Y. Yamamoto, R. Kurps, Juichi Murota, B. Tillack

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引用次数: 3

摘要

本文报道了砷原子层在硅(100)中掺杂的结果。还讨论了砷在Si(100)表面的吸附和偏析行为。SIMS和四点探针法用于砷剖面和剂量测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Arsenic atomic layer doping in Si using AsH3

Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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